advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 60v lower gate charge r ds(on) 50m fast switching characteristic i d 5.8a rohs compliant description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 45 /w data and specifications subject to change without notice 201204252 thermal data parameter storage temperature range total power dissipation 2.8 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.02 continuous drain current 3 4.6 pulsed drain current 1 30 gate-source voltage + 20 continuous drain current 3 5.8 parameter rating drain-source voltage 60 rohs-compliant product 1 AP9970GK a dvanced power mosfets from apec provide the designer with the best combination of fast switching, low on-resistance and cost- effectiveness. g d s d d s g sot-223
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 60 - - v bv dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.05 - v/ r ds(on) static drain-source on-resistance 2 v gs =10v, i d =5a - - 50 m v gs =4.5v, i d =3a - - 60 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =5a - 5 - s i dss drain-source leakage current v ds =60v, v gs =0v - - 1 ua drain-source leakage current (t j =70 o c) v ds =48v ,v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =5a - 11.5 15 nc q gs gate-source charge v ds =48v - 2.5 - nc q gd gate-drain ("miller") charge v gs =4.5v - 6 - nc t d(on) turn-on delay time 2 v ds =30v - 6 - ns t r rise time i d =1a - 5 - ns t d(off) turn-off delay time r g =3.3 ,v gs =10v - 22.5 - ns t f fall time r d =30 -6- ns c iss input capacitance v gs =0v - 910 1450 pf c oss output capacitance v ds =25v - 95 - pf c rss reverse transfer capacitance f=1.0mhz - 70 - pf r g gate resistance f=1.0mhz - 1.2 1.8 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =2.1a, v gs =0v - - 1.3 v t rr reverse recovery time 2 i s =5a, v gs =0 v , - 25 - ns q rr reverse recovery charge di/dt=100a/s - 31 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP9970GK 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec ; 120 /w when mounted on min. copper pad.
ap9970g k fig 1. typical output characteristics fig 2. typical output characteristics 20 fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. on-resistance vs. reverse diode drain current 3 0 10 20 30 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0v 5.0v 4.5v v g =3.0v 0 10 20 30 02468 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c 10v 7.0v 5.0v 4.5v v g =3.0v 0.6 1.0 1.4 1.8 25 50 75 100 125 150 t j , junction temperature ( o c) normalized r ds(on) i d =5a v g =10v 40 60 80 100 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =3a t a =25 o c 0 2 4 6 8 10 0 0.4 0.8 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 30.0 40.0 50.0 60.0 0102030 i d , drain current (a) r ds(on) (m ) v gs =4.5v v gs =10v
ap9970g k fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4 0 2 4 6 8 10 12 0 5 10 15 20 25 30 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =5a v ds =32v v ds =40v v ds =48v 10 100 1000 10000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss q v g 4.5v q gs q gd q g charge 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0 10 20 30 0246 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja = 120 /w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse
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